ROHM Semiconductor HP8S36
Middle Power MOSFET
| Part No. | HP8S36 |
|---|---|
| Datasheet | HP8S36 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Middle Power MOSFET |
| Buy | Stock & Price |
HP8S36 30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on - resistance. 2) Pb-free lead plating ; RoHS compliant. 3) Halogen Free. 4) Built in Schottky-barrier diode(Tr2) lOutline HSOP8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking HP8S36 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Nch Unit Drain - Source voltage VDSS 30 30 V Continuous drain current ID*1 ±27 ±80 A ID ±12 ±32 A Pulsed drain current IDP*2 ±48 ±128 A Gate - Source voltage VGSS ±20 ±12 V Avalanche current, single pulse IAS*3 12 32 A Avalanche energy, single pulse EAS*3 5.3 39.3 mJ Power dissipation element total PD*1 22 29 W P
