ROHM Semiconductor HS8MA2
Power MOSFET
HS8MA2 30V Pch+Nch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Pch Tr2:Nch -30V 30V 80mΩ 35mΩ ±5.5A ±7.0A 4.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline DFN3333-9DC HSML3333L9 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Motor Drive Type Tape width (mm) Quantity (pcs) 12 1000 Taping code TCR1 Marking HS8MA2 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Pch Tr2:Nch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total Junction temperature Operating junction and storage temperature range VDSS -30 30 V ID*1 ±5.5 ±7.0 A IDP*2 ±30 ±30 A VGSS ±20 ±20 V PD*1 4.0 W PD*3 2.0 Tj 150 ℃ Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/19 20191011 - Rev.001 HS8MA2 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min.