IMX9T110 Datasheet | ROHM

.. IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 z Features 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. z External dimensions (Units : mm) 2.9±0.2 1.9±0.2 0.95 0.95 (4) (5) (6) 1.1 +0.2 - 0.1 0.8±0.1 +0.2 - 0.1 2.8±0.2 0~0.1 (3) z Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. All terminals have same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9 z Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 25 20 12 500 300(TOTAL) 150 - 55~+150 Unit V V V m A m W °C °C z Equivalent circuit (4) (5) (6) Tr1 Tr2 ∗ (3) (2) (1) ∗ 200m W per element must not be exceeded. z Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) h FE f T Cob Ron Min. 25 20 12 - - - 560 - - - Typ. - - - - - 0.18 - 350 8 0.8 Max. - - - 0.5 0.5 0.4 2700 - - - Unit V V V µA µA V - MHz p F Ω IC=10µA IC=1m A IE=10µA VCB=20V VEB=10V IC/IB=500m A/20m A VCE=3V, IC=10m A VCE=10V, IE=- 50m A, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1m A, Vi=100m Vrms, f=1k Hz Conditions 0.3~0.6 (2) (1) +0.1...