K1717 - 2SK1717

Features

1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+.
00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0.
+00..35 2.5+.
00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.

Rohm

Datasheet Details

Part number	K1717
Manufacturer	ROHM
File Size	80.12 KB
Description	2SK1717
Datasheet	K1717 Datasheet
Additional preview pages of the K1717 datasheet.

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Full PDF Text Transcription

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Transistors Small switching (60V, 2A) 2SK1717 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+−00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0−+00..35 2.5+−00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 Abbreviated symbol : KE 0.4−+00..

Published: May 29, 2015 |