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KDZ5.6B - Zener diode

Download the KDZ5.6B datasheet PDF. This datasheet also covers the KDZ56B variant, as both devices belong to the same zener diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1) Small power mold type. (PMDU) 2) High ESD tolerance 2.6±0.1 3.5±0.2 ① PMDU zConstruction Silicon epitaxial planar 0.9±0.1 zStructure 　 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date EX. KDZ10B zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Symbol P Tj Tstg Limits 1000 150 -55 to +1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KDZ56B_Rohm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KDZ5.6B
Manufacturer ROHM
File Size 134.22 KB
Description Zener diode
Datasheet download datasheet KDZ5.6B Datasheet

📁 Similar Datasheet

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KDZ5.6CE ZENER DIODE KEC
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KDZ5.6FV ZENER DIODE KEC
KDZ5.6VV ZENER DIODE KEC

Other Datasheets by ROHM

Part Number Description
KDZ5.6B Zener diode
KDZ5.1B Zener diode
KDZ5.1B Zener diode
KDZ10B Zener diode
KDZ11B Zener diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KDZ5.6B Diodes Zener diode KDZ5.6B zApplications Voltage regulation zDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 zLand size figure (Unit : mm) 1.2 0.85 zFeatures 1) Small power mold type. (PMDU) 2) High ESD tolerance 2.6±0.1 3.5±0.2 ① PMDU zConstruction Silicon epitaxial planar 0.9±0.1 zStructure 　 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date EX. KDZ10B zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Symbol P Tj Tstg Limits 1000 150 -55 to +150 Unit mW ℃ ℃ Rev.B 3.05 1/4 KDZ5.6B Diodes zElectrical characteristics (Ta=25°C) Symbol TYP. KDZ 3.6B KDZ 3.9B KDZ 4.