KDZV10B
Key Features
- 9±0.1
- 8±0.1 lStructure lConstruction Silicon epitaxial planar ROHM : PMDU JEDEC : SOD-123 Manufacture Date EX. KDZV10B lTaping specifications (Unit : mm)
- 0±0.1 2.0±0.05 φ11..5555± 00..0055 Cathode Anode
- 25±0.05
- 75±0.1
- 0±0.2 33..7711±±00..018
- 5±0.05
- 81±0.1
- 0±0.1 φ1.10.0±0.10.1 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Power dissipation P Junction temperature Storage temperature Tj Tstg Limits 1000 150 -55 to +150 Unit mW °C °C
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