ROHM Semiconductor MG6403WZ
Insulated Gate Bipolar Transistor
| Part No. | MG6403WZ |
|---|---|
| Datasheet | MG6403WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Collector - Emitter Voltage VCES Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature VGES IC*1 ICP*2 Tj *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Value 650 ±30 *1) 320 -40 to +175 Unit V V A A °C © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG6403WZ Datasheet lDesign Assurance Parameter Symbol Conditions Short Circuit Withstand Time VCC ≦ 360V, tsc*3 VGE = 15V, Tj = 25℃ Reverse Bias Safe Operating Area IC = 320A, VCC = 520V, RBSOA*3 VP = 650V, VGE = 15V, RG = 100Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. 2- - FULL SQUARE Unit μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - V Collector Cut - off Current...
