ROHM Semiconductor MG7210WZ
Insulated Gate Bipolar Transistor
| Part No. | MG7210WZ |
|---|---|
| Datasheet | MG7210WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Value 1200 ±30 *1) 75 -40 to +175 Unit V V A A °C © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG7210WZ Datasheet lDesign Assurance Parameter Symbol Conditions Short Circuit Withstand Time VCC ≦ 600V, tsc*3 VGE = 15V, Tj = 25℃ Short Circuit Withstand Time VCC ≦ 600V, tsc*3 VGE = 15V, Tj = 150℃ Reverse Bias Safe Operating Area IC = 75A, VCC = 1050V, RBSOA*3 VP = 1200V, VGE = 15V, RG = 50Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. 10 - - 8- - FULL SQUARE Unit μs μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA,...
