ROHM Semiconductor MG7213WZ
1200V 75A Insulated Gate Bipolar Transistor
| Part No. | MG7213WZ |
|---|---|
| Datasheet | MG7213WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 1200V 75A Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs●Outline Wafer
●Inner Circuit (2) (1) (3)
●Application General Inverter for Industrial Use Datasheet (1) Gate (2) Collector (3) Emitter
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ABSOLUTE MAXIMUM RATINGS
Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Value Unit 1200 V ±30 V *1) A 225 A -40 to +175 °C © 2021 ROHM Co., Ltd. All rights reserved. 1/3 2021.08 - Rev.A MG7213WZ Datasheet●Design Assurance Parameter Symbol Conditions Values Unit Min. Typ. Max. Short Circuit Withstand Time VCC ≦ 600V, tsc*3 VGE = 15V, Tj = 25℃ 10 - - μs Short Circuit Withstand Time VCC ≦ 600V, tsc*3 VGE = 15V, Tj = 150℃ 8 - - μs IC = 225A,VCC = 1050V, Reverse Bias Safe Operating Area RBSOA*3 VP = 1200V,VGE = 15V, FULL SQU...
