ROHM Semiconductor MG7405WZ
Insulated Gate Bipolar Transistor
| Part No. | MG7405WZ |
|---|---|
| Datasheet | MG7405WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 IF*1 IFP*2 Tj Value 1800 ±30 *1) 120 *1) 80 -40 to +175 Unit V V A A A A °C © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG7405WZ Datasheet lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 1800 - - V Collector Cut - off Current ICES VCE = 1860V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 120.7mA Collector - Emitter Saturation Voltage IC = 40A, VGE = 15V, VCE(sat)*3 Tj = 25°C Tj = 175°C Input Capacitan...
