ROHM Semiconductor MH2102WZ
Fast Recovery Diode
| Part No. | MH2102WZ |
|---|---|
| Datasheet | MH2102WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VRM IF*1 IFP*2 Tj Value 650 *1) 200 -40 to +175 Unit V A A °C lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Breakdown Voltage BV IR = 10μA 650 - -V Reverse Current IR VR = 650V Forward Voltage IF = 50A, VF*3 Tj = 25°C Tj = 175°C *3 Design assurance without measurement - - 10 μA - 1.45 1.9 V - 1.55 - © 2019 ROHM Co., Ltd. All rights reserved. 1/2 2019.08 - Rev.A MH2102WZ lChip Information Datasheet ① 325 3.70 2950 325 3600 3700 Unit : μm : Pad Area ① : Anode Bonding Pad Backside : Cathode 0.10±0.03 3.70 Unit：mm Wafer Size 150mm Wafer Thickness 0.07±0.01mm Chip Size 3.70mm×3.70mm Cut Line Width 0.10±0.03mm Top Side Metallization AlSiCu:5.0μm Back Side Metalliza...
