ROHM Semiconductor MH2103WZ
650V 80A Fast Recovery Diode
| Part No. | MH2103WZ |
|---|---|
| Datasheet | MH2103WZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 650V 80A Fast Recovery Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage Forward Current Pulsed Forward Current Operating Junction Temperature VRM IF*1 IFP*2 Tj 650 V *1) A 320 A -40 to +175 °C *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Unit Min. Typ. Max. Breakdown Voltage BV IR = 10μA 650 - - V Reverse Current IR VR = 650V Forward Voltage IF = 80A, VF*3 Tj = 25°C Tj = 175°C *3 Design assurance without measurement - - 10 μA - 1.45 1.9 V - 1.55 - © 2019 ROHM Co., Ltd. All rights reserved. 1/2 2019.08 - Rev.A MH2103WZ lChip Information Datasheet ① 325 4.50 3750 325 4400 4500 Unit : μm : Pad Area ① : Anode Bonding Pad Backside : Cathode 0.10±0.03 4.50 Unit：mm Wafer Size 150mm Wafer Thickness 0.07±0.01mm Chip Size 4.50mm×4.50mm Cut Line Width 0.10±0.03mm Top Side Metallization...
