ROHM Semiconductor MH2205WZ
1200V 50A Fast Recovery Diode
FEATURES
1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss●Inner Circuit (1) (2) Datasheet (1) Anode (2) Cathode
●Application Free Wheeling for Industrial Use
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ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature VRM IF*1 IFP*2 Tj 1200 V *1) A 150 A -40 to +175 °C *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.●
ELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Breakdown Voltage BV IR = 10μA 1200 - - V Reverse Current IR VR = 1200V IF = 50A, Forward Voltage VF*3 Tj = 25°C Tj = 175°C *3 Design assurance without measurement - - 10 μA - 1.65 2.1 V - 1.85 - © 2021 ROHM Co., Ltd. All rights reserved. 1/2 2021.08 - Rev.A MH2205WZ●Chip Information Datasheet 6000 5900 4904 ① 498 3104 498 4100 4200 0.10±0.03 4.20 Unit:mm 6.00 U...