ROHM Semiconductor PTZ6.2B
ZENER DIODE
APPLICATIONS
1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. !FEATURES
1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. !Construction Silicon epitaxial planar !External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 5.0±0.3 0∼0.1 2.6±0.2 ROHM : PMDS EIAJ : − JEDEC : SOD-106 0.1 +0.02 −0.1 2.0±0.2 Model name (voltage rank) Date of manufacture Ex. 1999.12→9.C !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Power dissipation ∗ P 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ Mounting density of other power components should be taken into consideration when laying out the pattern. !Marking (Voltage rank) Type No. PTZ3.6B PTZ3.9B PTZ4.3B PTZ4.7B PTZ5.1B PTZ5.6B PTZ6.2B PTZ6.8B PTZ7.5B (Ex.) PTZ3.6B 3.6 B 3.9 B 4.3 B 4.7 B 5.1 B 5.6 B 6.2 B 6.8 B 7.5 B Type No. PTZ8.2B PTZ9.1B PTZ10B PTZ11B PTZ12B PTZ13B PTZ15B PTZ16B PTZ18B 8.2 B 9.1 B 10 B 11 B 12 B 13 B 15 B 16 B 18 B Type No.