QH8JA1 Datasheet PDF

QH8JA1 -20V Pch +Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -20V 38mΩ ±5.0A 1.5W lFeatures 1) Low on - resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating ; RoHS compliant lOutline TSMT8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR JA1 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID*1 ±5.0 A Pulsed drain current IDP*2 ±18 A Gate - Source voltage VGSS ±10 V Avalanche current, single pulse IAS*3 -5.0 A Avalanche energy, single pulse EAS*3 8.9 mJ Power dissipation (total) PD*4 1.5 W PD*5 1.1 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 QH8JA1 lThermal resistance Parameter Thermal resistance, junction - ambient (total) Datasheet Symbol RthJA*4 RthJA*4 Values Min.