QH8K22 Datasheet PDF

QH8K22 40V Nch+Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 40V 46mΩ ±6.5A 2.5W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline TSMT8 lInner circuit Datasheet lPackaging specifications Packing lApplication Reel size (mm) Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (total) Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*1 PD*4 PD*5 Tj Tstg 40 ±6.5 ±18 ±20 4.5 1.6 2.5 1.5 1.1 150 -55 to +150 Embossed Tape 180 8 3000 TCR K22 Unit V A A V A mJ W ℃ ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170612 - Rev.003 QH8K22 lThermal resistance Parameter Thermal resistance, junction - ambient (total) Datasheet Symbol RthJA*4 RthJA*5 Values Unit Min.