ROHM Semiconductor QS5U13
The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.| Part No. | QS5U13 |
|---|---|
| Datasheet | QS5U13 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 2.5V Drive Nch+SBD MOSFET |
| Buy | Stock & Price |
QS5U13 2.5V Drive Nch+SBD MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 30V 100mΩ ±2.0A 1.25W lOutline TSMT5 lFeatures 1) 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Load switch, DC/ DC conversion Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) <MOSFET> Marking U13 Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Gate - Source voltage VGSS 12 V Continuous drain current ID ±2.0 A Pulsed drain current ID, *1 pulse ±8.0 A Continuous source current (body diode) IS 0.8 A Pulsed source current (body diode) IS, *1 pulse 3.2 A Power dissipation PD*3 0.9 W/element Junction temperature Tj 150 ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/10 20150730 - Rev.001 QS5U13 lAbsolute maximum ratings (Ta = 25°C) <Di> Parame...
