QS6K1 Datasheet PDF

Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 QS6K1 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) TSMT6 SOT-457 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : K01 zPackaging specifications Type QS6K1 Package Code Basic ordering unit (pieces) Taping TR 3000 zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±1.0 ±4.0 0.8 4.0 1.25 0.9 150 −55 to +150 Unit V V A...