QS8J11 Datasheet PDF

NotNeRewcDoemsimgennsded for QS8J11 -12V Pch +Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 43mΩ ±3.5A 1.5W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating ; RoHS compliant lOutline TSMT8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking J11 lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage VDSS ID ID,pulse*1 VGSS -12 ±3.5 ±12 0～-8 V A A V Power dissipation total element PD*2 1.5 1.25 W total PD*3 0.7 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 NotNeRewcDoemsimgennsded for QS8J11 lThermal resistance Parameter Thermal resistance, junction - ambient total element total Datasheet Symbol RthJA*2 RthJA*3 Values Min.