QS8K13 Datasheet PDF

QS8K13 30V Nch+Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 28mΩ ±6A 1.5W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). lOutline TSMT8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking K13 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage VDSS ID IDP*1 VGSS 30 V ±6 A ±18 A ±20 V Power dissipation total PD*2 element 1.5 1.25 W total PD*3 1.1 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160831 - Rev.001 QS8K13 lThermal resistance Parameter Thermal resistance, junction - ambient total element total Datasheet Symbol RthJA*2 RthJA*3 Values Unit Min. Typ. Max. - - 83.3...