QS8K2FRA Datasheet PDF

QS8K2FRA 30V Nch+Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 54mΩ ±3.5A 1.5W lFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified lOutline TSMT8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 180 8 3000 TR K02 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Pulsed drain current ID ±3.5 A IDP*1 ±12 A Gate - Source voltage VGSS ±12 V Power dissipation (total) PD*2 1.5 W PD*3 1.1 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 QS8K2FRA lThermal resistance Parameter Thermal resistance, junction - ambient (total) Datasheet Symbol RthJA*2 RthJA*3 Values Min.