QS8M51 Datasheet PDF

QS8M51 100V Nch + Pch Small Signal MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 100V -100V 325mΩ 470mΩ ±2A ±1.5A 1.5W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating ; RoHS compliant lOutline TSMT8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking M51 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total Junction temperature Operating junction and storage temperature range VDSS 100 -100 V ID ±2 ±1.5 A IDP*1 ±6 ±6 A VGSS ±20 ±20 V PD*2 1.5 W PD*3 1.1 Tj 150 ℃ Tstg -55 to +150 ℃ © 2018 ROHM Co., Ltd. All rights reserved. 1/19 20180827 - Rev.002 QS8M51 lThermal resistance Parameter Thermal resistance, junction - ambient total Datasheet Symbol RthJA*2 RthJA*3 Values Min.