ROHM Semiconductor QST8
Middle Power Transistor
QST8 Middle Power Transistor (-12V /-1.5A) Parameter VCEO IC Tr1 and Tr2 -12V -1.5A lFeatures 1) Collector current is large. 2) Collector saturation voltage is low VCE(sat)≦ -200mV at IC= -500mA / I B= -25mA lOutline SOT-457T SC-95 TSMT6 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package Package size Taping Reel size Tape width Quantity code (mm) (mm) (pcs) Marking QST8 SOT-457T 2928 TR 180 8 (TSMT6) 3000 T08 © 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190527 - Rev.002 QST8 lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Collector-base voltage VCBO -15 Collector-emitter voltage VCEO -12 Emitter-base voltage VEBO -6 Collector current Power dissipation IC ICP*1 PD*2 PD*3*4 -1.5 -3 0.5 1.25 Junction temperature Range of storage temperature Tj 150 Tstg -55 to +150 Datasheet Unit V V V A A W/Total W/Total ℃ ℃ lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min.