QST9 Datasheet PDF

QST9 Transistors General purpose amplification (−30V, −1A) QST9 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) 2.8 1.6 (1) zFeatures 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −350mV At IC = −500mA / IB = −25mA (4) (5) (6) 0.4 0.16 (3) (2) ROHM : TSMT6 Each lead has same dimensions Abbreviated symbol : T09 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current zEquivalent circuit Unit V V V A ∗1 A mW/TOTAL ∗2 W/TOTAL ∗3 W/ELEMENT ∗3 °C °C (6) (5) (4) Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Power dissipation Junction temperature Range of storage temperature Limits −30 −30 −6 −1 −2 500 1.25 0.9 150 −55 to+150 (1) (2) (3) ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter br...