ROHM Semiconductor R4008AND
10V Drive Nch MOSFET
FEATURES
1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.● Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> 6.5 5.1 2.3 0.5 0.9 5.5 1.5 (1) Gate (2) Drain (3) Source 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5
● Application Switching
● Packaging specifications Package Type Code Basic ordering unit (pieces) R4008AND Taping TL 2500
● Inner circuit ∗1
● Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed VDSS VGSS ID *4 IDP 400 30 8 32 *1 48 *2 Source current (Body Diode) Continuous Pulsed IS *4 ISP 8 32 *1 48 *2 Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature IAS *3 EAS *3 PD *5 Tch Tstg 4 4.3 20 150 55 to 150 *1 Pw10s, Duty cycle1% *2 Pw≤1s, Duty cycle≤1% Limited by Safe Operating Area.(VDS≤30V) *3 L 500H, VDD=50V, RG=25, Tch=25C *4 Limited only by maximu...