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R5005CNJ Datasheet PDF

ROHM Semiconductor R5005CNJ

10V Drive N-channel MOSFET

Part No. R5005CNJ
Datasheet R5005CNJ Download
Manufacturer
ROHM Semiconductor
Description 10V Drive N-channel MOSFET
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R5005CNJ datasheet page 1 preview
R5005CNJ Nch 500V 5A Power MOSFET Datasheet lOutline VDSS RDS(on)(Max.) ID PD 500V 1.6Ω ±5A 65W TO-263 SC-83 LPT(S) for d lFeatures 1) Low on-resistance. e 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed d to be ±30V. n s 4) Drive circuits can be simple. 5) Parallel use is easy. e n 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications m ig Packing sReel size (mm) m lApplication e Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) o D Taping code c Marking e lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) w Parameter Symbol Value R e Drain - Source voltage VDSS 500 TC = 25°C ID*1 ±5 t N Continuous drain current TC = 100°C ID*1 ±2.4 o Pulsed drain current IDP*2 ±20 NGate - Source voltage VGSS ±30 Embossed Tape 330 24 1000 TL R5005CNJ Unit V A A A V Avalanche current, single pulse IAS*3 2.5 A Avalanche energy, single pulse EAS*3 1.6 mJ Avalanche energy, repetitive EAR*4 1.3 mJ Power dissipation (Tc = 25°C)...
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