R5007ANJ Datasheet PDF

10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 2.7 (1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source) (1) (2) Each lead has same dimensions zApplications Switching zInner circuit ∗1 zPackaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode R5007ANJ zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 500 ±30 ±7 ±28 7 28 3.5 3.