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R5007ANJ - 10V Drive Nch MOSFET

Key Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 2.7 (1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source) (1) (2) Each lead has same dimensions z.

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Datasheet Details

Part number R5007ANJ
Manufacturer ROHM
File Size 265.34 KB
Description 10V Drive Nch MOSFET
Datasheet download datasheet R5007ANJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 2.