ROHM Semiconductor R5207AND
Nch 525V 7A Power MOSFET
R5207AND Nch 525V 7A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 525V 1.0Ω ±7A 40W lOutline CPT3 SC-63 TO-252 lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking R5207A lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature TC = 25°C TC = 100°C VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg 525 ±7 ±3.4 ±28 ±30 3.2 2.5 3.5 40 150 -55 to +150 V A A A V mJ mJ A W ℃ ℃ Reverse diode dv/dt dv/dt 15 V/ns © 2015 ROHM Co., Ltd.