ROHM Semiconductor R6002END3
Power MOSFET
| Part No. | R6002END3 |
|---|---|
| Datasheet | R6002END3 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6002END3 Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuits can be simple 5) Parallel use is easy 6) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching Power Supply lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6002E Basic ordering unit (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±1.7 A ±4 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS*3 0.3 A Avalanche energy, single pulse EAS*3 6 mJ Power dissipation (Tc = 25°C) PD 26 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/12 20170929 - Rev.001 R6002END3 lThermal resistance Paramet...
