ROHM Semiconductor R6004CND
N-Channel MOSFET
| Part No. | R6004CND |
|---|---|
| Datasheet | R6004CND Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.● Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> 6.5 5.1 2.3 0.5 0.9 5.5 1.5 (1) Gate (2) Drain (3) Source 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5
● Application Switching
● Packaging specifications Package Type Code Basic ordering unit (pieces) R6004CND Taping TL 2500
● Inner circuit ∗1 ∗2
● Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID *3 IDP *1 IS ISP *1 IAS *2 EAS *2 PD *4 Tch Tstg 600 25 4 16 4 16 2 1.1 40 150 55 to 150 *1 Pw10s, Duty
