ROHM Semiconductor R6004ENJ
Power MOSFET
| Part No. | R6004ENJ |
|---|---|
| Datasheet | R6004ENJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V TO-263S RDS(on)(Max.) 0.98Ω SC-83 ID ±4.0A LPT(S) PD lFeatures 58W lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6004ENJ Unit Drain - Source voltage Continuous drain current Pulsed drain current TC = 25°C TC = 100°C VDSS ID*1 ID*1 IDP*2 600 V ±4.0 A ±2.2 A ±8.0 A Gate - Source voltage Static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive IAR 0.8 A Avalanche energy, single pulse EAS*3 46 mJ Avalanche energy, repetitive EAR*3 0.13 mJ Power dissipation (TC = 25°C) PD*4 58 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ © 2019 ROHM Co., Ltd.
