ROHM Semiconductor R6004JNX
Power MOSFET
| Part No. | R6004JNX |
|---|---|
| Datasheet | R6004JNX Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6004JNX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V TO-220FM RDS(on)(Max.) 1.43Ω ID ±4A PD 35W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6004JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±4 A Pulsed drain current IDP*2 ±12 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1.0 A Avalanche energy, single pulse EAS*3 52 mJ Power dissipation (Tc = 25°C) PD 35 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190111 - Rev.002 R6004JNX lThermal resistance Parameter Thermal resistance, ju...
