R6004KND Datasheet PDF

R6004KND Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant. lOutline TO-252 SC-63 CPT3 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking R6004KND lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±4.0 A ±12 A Gate - Source voltage Static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS*3 0.8 A Avalanche energy, single pulse EAS*3 46 mJ Power dissipation (Tc = 25°C) PD 58 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range