ROHM Semiconductor R6006AND
Nch 600V 6A Power MOSFET
R6006AND Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 1.2W 6A 40W lOutline CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. 5) Parallel use is easy. *1 BODY DIODE 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 16 2,500 TL Marking R6006A lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 6 2.9 24 30 2.4 1.9 3 40 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns © 2013 ROHM Co., Ltd.