R6006JNX Datasheet PDF

R6006JNX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V TO-220FM RDS(on)(Max.) 0.936Ω ID ±6A PD 43W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6006JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±6 A Pulsed drain current IDP*2 ±18 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1.50 A Avalanche energy, single pulse EAS*3 117 mJ Power dissipation (Tc = 25°C) PD 43 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190111 - Rev.002 R6006JNX lThermal resistance Parameter Thermal resistance,...