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R6007KNJ Datasheet PDF

ROHM Semiconductor R6007KNJ

Power MOSFET

Part No. R6007KNJ
Datasheet R6007KNJ Download
Manufacturer
ROHM Semiconductor
Description Power MOSFET
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R6007KNJ datasheet page 1 preview
R6007KNJ Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.62Ω ±7A 78W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R6007KNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±7 A ±21 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 1.3 A Avalanche energy, single pulse EAS*3 133 mJ Power dissipation (Tc = 25°C) PD 78 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.004 R6007KNJ lThermal r...
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