ROHM Semiconductor R6007MNJ
Power MOSFET
| Part No. | R6007MNJ |
|---|---|
| Datasheet | R6007MNJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6007MNJ Nch 600V 7A Power MOSFET Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline TO-263S RDS(on)(Max.) 0.730Ω SC-83 ID ±7A LPT(S) PD 94W lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6007MNJ Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1.0 A Avalanche energy, single pulse EAS*3 0.27 mJ Power dissipation (Tc = 25°C) PD*4 94 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd.
