Datasheet4U Logo Datasheet4U.com

R6008FNX - Nch 600V 8A Power MOSFET

Datasheet Summary

Features

  • 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source.
  • 1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - l.

📥 Download Datasheet

Datasheet preview – R6008FNX

Datasheet Details

Part number R6008FNX
Manufacturer ROHM
File Size 845.66 KB
Description Nch 600V 8A Power MOSFET
Datasheet download datasheet R6008FNX Datasheet
Additional preview pages of the R6008FNX datasheet.

📁 Similar Datasheet

  • R600 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R6000 - High Voltage Rectifiers (LGE)
  • R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
  • R6000GP - High Voltage Silicon Rectifier (MCC)
  • R6002END3 - N-Channel MOSFET (INCHANGE)
  • R6003KND3 - N-Channel MOSFET (INCHANGE)
  • R6004ENJ - N-Channel MOSFET (INCHANGE)
  • R6004ENX - N-Channel MOSFET (INCHANGE)
  • R6004JND3 - N-Channel MOSFET (INCHANGE)
  • R6004JNJ - N-Channel MOSFET (INCHANGE)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
R6008FNX Nch 600V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.95W 8A 50W lOutline TO-220FM (1)(2)(3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 Body Diode 5) Parallel use is easy.
Published: |