R6009JNJ Datasheet PDF

R6009JNJ Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6009JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1.8 A Avalanche energy, single pulse EAS*3 177 mJ Power dissipation (Tc = 25°C) PD 125 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 R6009JNJ lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC RthJA Tsold Values Unit Min.