ROHM Semiconductor R6009KNJ
Power MOSFET
| Part No. | R6009KNJ |
|---|---|
| Datasheet | R6009KNJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6009KNJ Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.535Ω ±9A 94W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R6009KNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±9 A ±27 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 1.4 A Avalanche energy, single pulse EAS*3 153 mJ Power dissipation (Tc = 25°C) PD 94 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R6009KNJ...
