R6010MND3 Datasheet PDF

R6010MND3 Nch 600V 10A Power MOSFET Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline RDS(on)(Max.) 0.380Ω ID ±10A TO-252 PD 143W lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6010M Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±10 A Pulsed drain current IDP*2 ±30 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS 1.5 A Avalanche energy, single pulse EAS*3 0.6 mJ Power dissipation (Tc = 25°C) PD*4 143 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd.