R6011KNJ Datasheet PDF

R6011KNJ Nch 600V 11A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.39Ω ±11A 124W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R6011KNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±11 A ±33 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 1.8 A Avalanche energy, single pulse EAS*3 210 mJ Power dissipation (Tc = 25°C) PD 124 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.003 R6011KNJ lTher...