R6012ANX Datasheet PDF

R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications zInner circuit Bulk − 500 ∗1 Package Type Code Basic ordering unit (pieces) R6012ANX zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1...