R6012JNX Datasheet PDF

R6012JNX Nch 600V 12A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.390Ω ±12A 60W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-220FM lInner circuit lApplication Switching applications lPackaging specifications Packing Tube Packing code C7 G Marking R6012JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±12 A Pulsed drain current IDP*2 ±36 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.9 A Avalanche energy, single pulse EAS*3 327 mJ Power dissipation (Tc = 25°C) PD 60 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190111 - Rev.002 R6012JNX lThermal resistance Parameter Ther...