R6015ANJ Datasheet PDF

10V Drive Nch MOSFET R6015ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source 7.25 13.1 3.0 1.0 1.24 9.0 0.78 5.08 2.7 (1) (2) (3) Each lead has same dimensions zApplications Switching LPTL 8.9 4.8 zPackaging specifications Package Type Code Basic ordering unit (pieces) Taping LPTS LPTL 1000 TL TLL (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed zInner circuit Limits 600 ±30 Un...