R6020ENZ1 Datasheet PDF

R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.196W TO-247 ID 20A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE t 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - le lApplication Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6020ENZ1 o lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V s Continuous drain current Tc = 25°C Tc = 100°C ID *1 20 A ID *1 10.9 A Pulsed drain current ID,pulse *2 60 A b Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 418 mJ Avalanche energy, repetitive EAR *3 0.63 mJ O Avalanche current, repetitive IAR 3.4 A Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Reverse diode dv/dt dv/dt *4 15 V/ns © 2014 ROHM Co., Ltd.