ROHM Semiconductor R6020FNJ
Power MOSFET
R6020FNJ Nch 600V 20A Power MOSFET Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline TO-263 RDS(on)(Max.) 0.28Ω SC-83 ID ±20A LPT(S) PD 304W lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R6020FNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Avalanche energy, repetitive Power dissipation (Tc = 25°C) Junction temperature Operating junction and storage temperature range VDSS ID*1 ID*1 IDP*2 VGSS I...