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R6020KNJ Datasheet PDF

ROHM Semiconductor R6020KNJ

Power MOSFET

Part No. R6020KNJ
Datasheet R6020KNJ Download
Manufacturer
ROHM Semiconductor
Description Power MOSFET
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R6020KNJ datasheet page 1 preview
R6020KNJ Nch 600V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.196Ω ±20A 231W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R6020KNJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±20 A ±60 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 3.4 A Avalanche energy, single pulse EAS*3 418 mJ Power dissipation (Tc = 25°C) PD 231 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001 R60...
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