R6530KNZ Datasheet PDF

R6530KNZ Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 86W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-3PF lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Tube Packing code C17 Marking R6530KNZ Quantity (pcs) 300 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±30 A ±90 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 5.2 A Avalanche energy, single pulse EAS*3 730 mJ Power dissipation (Tc = 25°C) PD 86 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20191226 - Rev.002 R6530KNZ lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC*4 RthJA Tsold Values Unit Min.