ROHM Semiconductor R6576ENZ1
Power MOSFET
| Part No. | R6576ENZ1 |
|---|---|
| Datasheet | R6576ENZ1 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6576ENZ1 Nch 650V 76A Power MOSFET Datasheet lOutline VDSS 650V TO-247 RDS(on)(Max.) ID PD 0.046Ω ±76A 735W e lFeatures 1) Low on-resistance t 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit le lApplication Switching lPackaging specifications Packing Packing code oMarking Basic ordering unit (pcs) s lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage b Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 ±76 ±228 OGate - Source voltage static ±20 VGSS AC (f>1Hz) ±30 Tube C9 R6576ENZ1 450 Unit V A A V V Avalanche current, single pulse IAS 13.4 A Avalanche energy, single pulse EAS*3 2115 mJ Power dissipation (Tc = 25°C) PD 735 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20171004 - Rev.004 R6576ENZ1 Datasheet lThermal resistance Parameter Symbol Values Unit Min.
